FS950R08A6P2B IGBT MODULE 750V 950A SIEMENS ET200 1 V Continuous Collector Current

1 V Continuous Collector Current at 25 C: 400 A Gate-Emitter Leakage Current: 1 uA Pd - Power Dissipation: 2350 W Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C Brand: Mitsubishi Electric Maximum Gate Emitter Voltage: 20 V Mounting Style: Screw Product Type: IGBT Modules

6 A screw terminal Standard switching capacity

SIMATIC SC

100% 240 s Unfiltered 380-480 V 3 AC +10/-20% 47-63 Hz Ambient temperature -20 to +45 °C Size: FSD Degree of protection IP20 / UL open type painting 3C2 with Basic Operator Panel Without IO expansion Fieldbus integrated: MODBUS RTU

100% 240s radio interference suppression filter for category C2 380-480V3AC+10/-20% 47-63Hz ambient temperature -20 to +45 °C frame size: FSE degree of protection IP20 / UL open type painting 3C2 with Intelligent Operator Panel without IO expansion fieldbus integrated: MODBUS RTU

FS950R08A6P2B IGBT MODULE 750V 950A SIEMENS ET200 1 V Continuous Collector CurrentFS950R08A6P2B IGBT MODULE 750V 950A